Product Details for Material from DIODES INCORPORATED - FZT655TA - Bipolar Transistors - BJT NPN High Voltage

FZT655TA DIODES INCORPORATED Bipolar Transistors - BJT NPN High Voltage

Part Nnumber
FZT655TA
Description
Bipolar Transistors - BJT NPN High Voltage
Producer
DIODES INCORPORATED
Basic price
0,80 EUR

The product with part number FZT655TA (Bipolar Transistors - BJT NPN High Voltage) is from company DIODES INCORPORATED and distributed with basic unit price 0,80 EUR. Minimal order quantity is 1 pc, Approx. production time is 3 weeks.


Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: Diodes Incorporated Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 150 V Collector- Emitter Voltage VCEO Max: 150 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 180 mV Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 30 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-223 DC Collector/Base Gain hFE Min: 50 at 10 mA at 5 V, 50 at 500 mA at 5 V, 20 at 1 A at 5 V DC Current Gain hFE Max: 50 Maximum Power Dissipation: 2 W Minimum Operating Temperature: - 55 C Packaging: Reel Series: FZT655 Factory Pack Quantity: 1000


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