DSM80101M-7 DIODES INCORPORATED Bipolar Transistors - BJT PNP Trans Dual 400mW Switching -80V

Part Nnumber
DSM80101M-7
Description
Bipolar Transistors - BJT PNP Trans Dual 400mW Switching -80V
Producer
DIODES INCORPORATED
Basic price
0,55 EUR

The product with part number DSM80101M-7 (Bipolar Transistors - BJT PNP Trans Dual 400mW Switching -80V) is from company DIODES INCORPORATED and distributed with basic unit price 0,55 EUR. Minimal order quantity is 1 pc, Approx. production time is 6 weeks.


Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS:  Details Configuration: Dual Transistor Polarity: NPN Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 0.3 V Maximum DC Collector Current: 0.8 A Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-26-6 Brand: Diodes Incorporated DC Collector/Base Gain hFE Min: 120 at 10 mA at 1 V DC Current Gain hFE Max: 350 at 10 mA at 1 V Maximum Power Dissipation: 600 mW Minimum Operating Temperature: - 65 C Packaging: Reel Series: DSM801


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