ZXMN20B28KTC DIODES INCORPORATED MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL

Part Nnumber
ZXMN20B28KTC
Description
MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL
Producer
DIODES INCORPORATED
Basic price
0,88 EUR

The product with part number ZXMN20B28KTC (MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL) is from company DIODES INCORPORATED and distributed with basic unit price 0,88 EUR. Minimal order quantity is 1 pc, Approx. production time is 15 weeks.


Diodes Incorporated Product Category: MOSFET RoHS:  Details Brand: Diodes Incorporated Id - Continuous Drain Current: 2.3 A Vds - Drain-Source Breakdown Voltage: 200 V Rds On - Drain-Source Resistance: 750 mOhms Transistor Polarity: N-Channel Vgs th - Gate-Source Threshold Voltage: 1.6 V Qg - Gate Charge: 8.1 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.3 W Mounting Style: SMD/SMT Package/Case: DPAK-3 Packaging: Reel Channel Mode: Enhancement Fall Time: 57.1 ns Forward Transconductance - Min: 6.13 S Minimum Operating Temperature: - 55 C Rise Time: 76.9 ns Series: ZXMN20 Typical Turn-Off Delay Time: 44.7 ns


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