Product Details for Material from DIODES INCORPORATED - DMG6402LVT-7 - MOSFET N-CH 30V 6A TSOT26 N-Channel 30V 6A (Ta) 1.75W (Ta) Surface Mount TSOT-26

DMG6402LVT-7 DIODES INCORPORATED MOSFET N-CH 30V 6A TSOT26 N-Channel 30V 6A (Ta) 1.75W (Ta) Surface Mount TSOT-26

Part Nnumber
DMG6402LVT-7
Description
MOSFET N-CH 30V 6A TSOT26 N-Channel 30V 6A (Ta) 1.75W (Ta) Surface Mount TSOT-26
Producer
DIODES INCORPORATED
Basic price
0,41 EUR

The product with part number DMG6402LVT-7 (MOSFET N-CH 30V 6A TSOT26 N-Channel 30V 6A (Ta) 1.75W (Ta) Surface Mount TSOT-26) is from company DIODES INCORPORATED and distributed with basic unit price 0,41 EUR. Minimal order quantity is 1 pc, Approx. production time is 35 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 498pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.75W (Ta) Rds On (Max) @ Id, Vgs 30 mOhm @ 7A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSOT-26 Package / Case SOT-23-6 Thin, TSOT-23-6


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