Product Details for Material from DIODES INCORPORATED - 2DB1182Q-13 - TRANS PNP 32V 2A TO252 Bipolar (BJT) Transistor PNP 32V 2A 110MHz 10W Surface Mount TO-252

2DB1182Q-13 DIODES INCORPORATED TRANS PNP 32V 2A TO252 Bipolar (BJT) Transistor PNP 32V 2A 110MHz 10W Surface Mount TO-252

Part Nnumber
2DB1182Q-13
Description
TRANS PNP 32V 2A TO252 Bipolar (BJT) Transistor PNP 32V 2A 110MHz 10W Surface Mount TO-252
Producer
DIODES INCORPORATED
Basic price
0,12 EUR

The product with part number 2DB1182Q-13 (TRANS PNP 32V 2A TO252 Bipolar (BJT) Transistor PNP 32V 2A 110MHz 10W Surface Mount TO-252) is from company DIODES INCORPORATED and distributed with basic unit price 0,12 EUR. Minimal order quantity is 2.5 pc, Approx. production time is 42 weeks.


Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 32V Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 3V Power - Max 10W Frequency - Transition 110MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252


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